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Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET

Keiji Ikeda, Tatsuro Maeda, Shinichi Takagi

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Key concepts: Germanide, Platinum, Materials science, Schottky barrier, MOSFET, Optoelectronics, Metal, Germanium

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Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET — Research Paper | ScholarLens