Saturation of generation-recombination current for very small recombination times

Analysis of the generation-recombination processes by numerical simulation allows consideration of a very small recombination time constant in order to study the behavior of p-n junctions in this extreme situation. The generation-recombination current does not increase indefinitely as the generation or recombination mechanism is more and more active. Instead, current saturation occurs as a result of the continuity equation along with the generation-recombination expression. This generation-recombination current saturation takes place in any semiconductor and establishes the maximum current limit that can be yielded by this mechanism.