Spectroscopic study of doubly excited states in Mg-like Si using dielectronic recombination

We present calculated and experimentally derived electron–ion recombination rate coefficients for Na-like Si IV, recombining into Mg-like Si III, and provide accurate spectroscopic data for doubly excited states located above the ionization threshold of Si III. The experimental recombination rate coefficients were measured in a merged-beam-type experiment at the heavy-ion storage ring CRYRING at the Manne Siegbahn Laboratory in Stockholm. Changing the electron–ion relative energy from 0 to 20 eV we covered the energy region from the first to the third ionization threshold. We find that even for the low-charged Si 2+ ion, a relativistic many-body perturbation theory calculation is necessary, to describe the recombination rate coefficients in the low-energy region, up to 1.5 eV, satisfactorily. Doubly excited states, forbidden to form in LS coupling, are responsible for the most prominent dielectronic recombination resonances at low energies and contribute with 40% to the strength. Several wide resonances give rise to a plateau-like formation in the recombination spectrum. A broader energy range, up to 6.7 eV, was covered with a non-relativistic many-body calculation. This range contains, in addition to 3p n ℓ resonances, several resonances of the type 3d n ℓ, with the LS-forbidden 3d 2 3 F states giving rise to a strong, isolated peak at 2.976 eV. The NIST database lists eleven doubly excited states of Si III with energy positions deviating considerably from our determination. Since the listed lines are also not fully matching those with the largest fluorescence yields it must be concluded that they are misidentified.