Electrical and Structural Properties of TiO2 Thin Film Prepared at Different Annealing Temperatures by Sol-Gel Spin-Coating Method
Mat Zain Basri, Mohd Nor Asiah, Mohd Khairul Ahmad, Mohamad Hafiz Mamat, Mohamad Rusop Mahmood
Abstract
Mat Zain Basri, Mohd Nor Asiah, Mohd Khairul Ahmad, Mohamad Hafiz Mamat, Mohamad Rusop Mahmood
Abstract
Titanium Dioxide (TiO2) thin films have been prepared on glass substrates by using sol-gel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO2 thin films improved as annealed at higher temperatures.
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Titanium Dioxide (TiO2) thin films have been prepared on glass substrates by using sol-gel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO2 thin films improved as annealed at higher temperatures.
Key concepts: Annealing (glass), Materials science, Thin film, Spin coating, Sol-gel, Electrical resistivity and conductivity, Diffraction, Analytical Chemistry (journal)