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1998•Journal of Photopolymer Science and TechnologyOpen access

Chemically Amplified Si-containing Resist for Bilayer Resist Process.

Yoichi Namba, Hiroshi Takahashi

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Abstract

A new positive-type chemically amplified Si-contained resist, which consist of polysilsesquioxane and methacrylate copolymer has been developed for ArF excimer laser lithography. The resist which was developed in 2.38% TMAH(tetramethylammonium hydroxide) has a high sensitivity(5mJ/cm2), good O2-etching resistance (selectivity>10) and showed excellent resolution. When examined in the bi-layer resist process(BLR), well-defined sub 160nm patterns were obtained.

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A new positive-type chemically amplified Si-contained resist, which consist of polysilsesquioxane and methacrylate copolymer has been developed for ArF excimer laser lithography. The resist which was developed in 2.38% TMAH(tetramethylammonium hydroxide) has a high sensitivity(5mJ/cm2), good O2-etching resistance (selectivity>10) and showed excellent resolution. When examined in the bi-layer resist process(BLR), well-defined sub 160nm patterns were obtained.

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Available abstract

A new positive-type chemically amplified Si-contained resist, which consist of polysilsesquioxane and methacrylate copolymer has been developed for ArF excimer laser lithography. The resist which was developed in 2.38% TMAH(tetramethylammonium hydroxide) has a high sensitivity(5mJ/cm2), good O2-etching resistance (selectivity>10) and showed excellent resolution. When examined in the bi-layer resist process(BLR), well-defined sub 160nm patterns were obtained.

Key concepts: Resist, Tetramethylammonium hydroxide, Materials science, Excimer laser, Lithography, Bilayer, Etching (microfabrication), Methacrylate

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