1995•Applied Physics LettersRequires access

New CdTe photoconductor array detector for x-ray applications

S. S. Yoo, S. Sivananthan, J. P. Faurie, Brian G. Rodricks, J. Bai, Pedro A. Montano

Abstract

A CdTe photoconductor array x-ray detector was grown using molecular beam epitaxy (MBE) on a Si(100) substrate. The temporal response of the photoconductor arrays is as fast as 21 ps rise time and 38 ps full width half-maximum (FWHM). The spatial resolution of the photoconductor was good enough to provide 75 μm FWHM using a 50 μm synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors.

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Key concepts: Full width at half maximum, Molecular beam epitaxy, X-ray detector, Cadmium telluride photovoltaics, Detector, Optics, Materials science, Optoelectronics