2006Japanese Journal of Applied PhysicsOpen access

Ferroelectricity Down to at Least 2 nm in Multiferroic BiFeO3 Epitaxial Thin Films

H. Béa, S. Fusil, K. Bouzéhouane, Manuel Bibès, M. Sirena, G. Herranz, Eric Jacquet, J. P. Contour, A. Barthélémy

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Abstract

We report here on the preservation of ferroelectricity down to 2 nm in BiFeO 3 ultrathin films. The electric polarization can be switched reversibly and is stable over several days. Our findings bring insight on the fundamental problem of ferroelectricity at low thickness and confirm the potential of BiFeO 3 as a lead-free ferroelectric and multiferroic material for nanoscale devices.

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We report here on the preservation of ferroelectricity down to 2 nm in BiFeO 3 ultrathin films. The electric polarization can be switched reversibly and is stable over several days. Our findings bring insight on the fundamental problem of ferroelectricity at low thickness and confirm the potential of BiFeO 3 as a lead-free ferroelectric and multiferroic material for nanoscale devices.

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Available abstract

We report here on the preservation of ferroelectricity down to 2 nm in BiFeO 3 ultrathin films. The electric polarization can be switched reversibly and is stable over several days. Our findings bring insight on the fundamental problem of ferroelectricity at low thickness and confirm the potential of BiFeO 3 as a lead-free ferroelectric and multiferroic material for nanoscale devices.

Key concepts: Multiferroics, Ferroelectricity, Materials science, Nanoscopic scale, Polarization (electrochemistry), Thin film, Epitaxy, Polarization density

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