Low temperature dielectric characterization of Mg-doped SrTiO3 thin films prepared by sol-gel
Olena Okhay, Aiying Wu, Paula Maria Vilarinho, Alexander Tkach
Abstract
Olena Okhay, Aiying Wu, Paula Maria Vilarinho, Alexander Tkach
Abstract
Voltage dependence of dielectric constant ε′ of ferroelectrics and low dielectric loss tan δ of incipient ferroelectrics make them attractive for tuning elements in microwave circuits. In this letter, field dependence of the low-temperature dielectric permittivity and polarization of Mg-doped SrTiO3 films is studied. Incorporation of Mg on both Sr and Ti sites decreases the ε′ and relative tunability nr of sol-gel derived SrTiO3 films, whereas polarization is reduced by Ti site substitution only. tan δ of the studied films is ≤0.012, decreasing at low temperatures down to 0.001 when Ti is substituted by 5% of Mg.
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Voltage dependence of dielectric constant ε′ of ferroelectrics and low dielectric loss tan δ of incipient ferroelectrics make them attractive for tuning elements in microwave circuits. In this letter, field dependence of the low-temperature dielectric permittivity and polarization of Mg-doped SrTiO3 films is studied. Incorporation of Mg on both Sr and Ti sites decreases the ε′ and relative tunability nr of sol-gel derived SrTiO3 films, whereas polarization is reduced by Ti site substitution only. tan δ of the studied films is ≤0.012, decreasing at low temperatures down to 0.001 when Ti is substituted by 5% of Mg.
Key concepts: Dielectric, Materials science, Permittivity, Doping, Dielectric loss, Sol-gel, Polarization (electrochemistry), Thin film