2010•Applied Physics LettersRequires access

Low temperature dielectric characterization of Mg-doped SrTiO3 thin films prepared by sol-gel

Olena Okhay, Aiying Wu, Paula Maria Vilarinho, Alexander Tkach

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Abstract

Voltage dependence of dielectric constant ε′ of ferroelectrics and low dielectric loss tan δ of incipient ferroelectrics make them attractive for tuning elements in microwave circuits. In this letter, field dependence of the low-temperature dielectric permittivity and polarization of Mg-doped SrTiO3 films is studied. Incorporation of Mg on both Sr and Ti sites decreases the ε′ and relative tunability nr of sol-gel derived SrTiO3 films, whereas polarization is reduced by Ti site substitution only. tan δ of the studied films is ≤0.012, decreasing at low temperatures down to 0.001 when Ti is substituted by 5% of Mg.

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Voltage dependence of dielectric constant ε′ of ferroelectrics and low dielectric loss tan δ of incipient ferroelectrics make them attractive for tuning elements in microwave circuits. In this letter, field dependence of the low-temperature dielectric permittivity and polarization of Mg-doped SrTiO3 films is studied. Incorporation of Mg on both Sr and Ti sites decreases the ε′ and relative tunability nr of sol-gel derived SrTiO3 films, whereas polarization is reduced by Ti site substitution only. tan δ of the studied films is ≤0.012, decreasing at low temperatures down to 0.001 when Ti is substituted by 5% of Mg.

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Available abstract

Voltage dependence of dielectric constant ε′ of ferroelectrics and low dielectric loss tan δ of incipient ferroelectrics make them attractive for tuning elements in microwave circuits. In this letter, field dependence of the low-temperature dielectric permittivity and polarization of Mg-doped SrTiO3 films is studied. Incorporation of Mg on both Sr and Ti sites decreases the ε′ and relative tunability nr of sol-gel derived SrTiO3 films, whereas polarization is reduced by Ti site substitution only. tan δ of the studied films is ≤0.012, decreasing at low temperatures down to 0.001 when Ti is substituted by 5% of Mg.

Key concepts: Dielectric, Materials science, Permittivity, Doping, Dielectric loss, Sol-gel, Polarization (electrochemistry), Thin film

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