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1983•Journal of Vacuum Science & Technology B Microelectronics Processing and PhenomenaRequires access

100 keV focused ion beam system with a E×B mass filter for maskless ion implantation

Takao Shiokawa, Pil Hyon Kim, K. Toyoda, Susumu Namba, Takao Matsui, Kenji Gamo

Open publisher page 44 citations

Abstract

Various liquid metal alloy ion sources and a 100 keV mass separated focused ion beam system have been fabricated and their basic characteristics have been measured. These are mass spectra, energy spread and angular current intensity for ion sources, and focusing characteristics of the system. It was observed that Be–Si–Au ternary alloy ion sources produce doubly charged Be and Si ions and the importance of these ion sources is demonstrated by fabricating a GaAs JFET using a maskless ion implantation technique and by PMMA resist exposure.

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What this paper is about

Various liquid metal alloy ion sources and a 100 keV mass separated focused ion beam system have been fabricated and their basic characteristics have been measured. These are mass spectra, energy spread and angular current intensity for ion sources, and focusing characteristics of the system. It was observed that Be–Si–Au ternary alloy ion sources produce doubly charged Be and Si ions and the importance of these ion sources is demonstrated by fabricating a GaAs JFET using a maskless ion implantation technique and by PMMA resist exposure.

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Available abstract

Various liquid metal alloy ion sources and a 100 keV mass separated focused ion beam system have been fabricated and their basic characteristics have been measured. These are mass spectra, energy spread and angular current intensity for ion sources, and focusing characteristics of the system. It was observed that Be–Si–Au ternary alloy ion sources produce doubly charged Be and Si ions and the importance of these ion sources is demonstrated by fabricating a GaAs JFET using a maskless ion implantation technique and by PMMA resist exposure.

Key concepts: Ion, Ion source, Materials science, Ion beam deposition, Ion beam, Ion implantation, Ion gun, Ion beam mixing

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