1977•Electronics LettersRequires access

Theory of depletion-layer recombination in silicon p–n junctions

Peter John Anderson, M. J. Buckingham

Abstract

A new theory of depletion-layer recombination in silicon p-n junctions is presented, based on the recombination statistics of 3-charge-state centres. It is shown that, with an appropriate choice of recombination-centre parameters, the forward current/voltage characteristics predicted by the theory show voltage-independent m values of ̃1.5.

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Key concepts: Recombination, Depletion region, Silicon, Layer (electronics), Voltage, Materials science, Optoelectronics, Charge (physics)