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Semiclassical theory of interband tunnelling in semiconductor heterostructures

V. Ryzhii, A Zhakharova

Abstract

A new method based on the semiclassical approximation is proposed, which allows the authors to calculate the characteristics of interband tunnelling devices with abrupt heterojunctions. It is shown that the tunnelling probability for a quasiparticle in the InAs/AlGaSb/InAs structure obtained using this method differs strongly from that obtained using the conventional WKB approximation.

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Available abstract

Key concepts: Semiclassical physics, Quantum tunnelling, WKB approximation, Heterojunction, Quasiparticle, Condensed matter physics, Semiconductor, Tunnel effect