A Technique for the Design of Microwave Transistor Oscillators (Short Paper)
K.L. Kotzebue
Abstract
K.L. Kotzebue
Abstract
A technique for the design of microwave transistor oscillators is presented in which measurements made on an experimentally optimized amplifier are used to calculate six basis oscillator circuits which yield maximum power output. The procedure has been experimentally verified by the construction of a silicon bipolar transistor test oscillator at 1 GHz.
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A technique for the design of microwave transistor oscillators is presented in which measurements made on an experimentally optimized amplifier are used to calculate six basis oscillator circuits which yield maximum power output. The procedure has been experimentally verified by the construction of a silicon bipolar transistor test oscillator at 1 GHz.
Key concepts: Transistor, Amplifier, Microwave, Electronic engineering, Bipolar junction transistor, Electrical engineering, Monolithic microwave integrated circuit, Electronic circuit