Molecular field-effect transistors using conducting polymer Langmuir–Blodgett films
Jari Paloheimo, Pekka Kuivalainen, Henrik Stubb, Elina Vuorimaa, P. Yli‐Lahti
Abstract
Jari Paloheimo, Pekka Kuivalainen, Henrik Stubb, Elina Vuorimaa, P. Yli‐Lahti
Abstract
Thin-film field-effect transistors (FETs) have been prepared using poly(3-hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.
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Thin-film field-effect transistors (FETs) have been prepared using poly(3-hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.
Key concepts: Arachidic acid, Langmuir–Blodgett film, Monolayer, Field-effect transistor, Materials science, Semiconductor, Conductivity, Polymer