Optically addressed multiband photodetector for infrared imaging applications
O. O. Cellek, Y.–H. Zhang
Abstract
O. O. Cellek, Y.–H. Zhang
Abstract
Multiband infrared focal plane arrays (FPAs) with small pixel pitch have increased device processing complexity since they often need more than two terminals per pixel for readouts. Simpler FPAs are enabled by our newly demonstrated optically-addressed two-terminal multiband photodetector architecture. For long-wavelength infrared (LWIR) and midwavelength infrared (MWIR) imaging applications, the use of quantum well infrared photodetectors (QWIP) has been investigated. The results show that the utilization of unipolar QWIPs with bipolar near infrared (NIR) devices is feasible with this new optical-addressing scheme. Potential device performance is analyzed with an equivalent AC circuit model. Proposed design maximizes fill factor and enables small pixel-pitch FPA with single indium-bump per pixel for NIR/MWIR/LWIR multiband detection capability.
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Multiband infrared focal plane arrays (FPAs) with small pixel pitch have increased device processing complexity since they often need more than two terminals per pixel for readouts. Simpler FPAs are enabled by our newly demonstrated optically-addressed two-terminal multiband photodetector architecture. For long-wavelength infrared (LWIR) and midwavelength infrared (MWIR) imaging applications, the use of quantum well infrared photodetectors (QWIP) has been investigated. The results show that the utilization of unipolar QWIPs with bipolar near infrared (NIR) devices is feasible with this new optical-addressing scheme. Potential device performance is analyzed with an equivalent AC circuit model. Proposed design maximizes fill factor and enables small pixel-pitch FPA with single indium-bump per pixel for NIR/MWIR/LWIR multiband detection capability.
Key concepts: Quantum well infrared photodetector, Photodetector, Infrared, Dot pitch, Optoelectronics, Large format, Pixel, Optics