2010IEEE Journal of Quantum ElectronicsRequires access

Determination of Junction Temperature in InGaN and AlGaInP Light-Emitting Diodes

Ya‐Ju Lee, Chia‐Jung Lee, Chih‐Hao Chen

Open publisher page 34 citations

Abstract

The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.

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What this paper is about

The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.

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OpenAlex reports 34 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.

Key concepts: Junction temperature, Light-emitting diode, Optoelectronics, Materials science, Diode, Temperature measurement, Wide-bandgap semiconductor, Thermal management of high-power LEDs

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