Electronic parameters and carrier transport mechanism of high-barrier Se Schottky contacts to n-type GaN
V. Rajagopal Reddy, V. Janardhanam, Jin‐Woo Ju, Hyung‐Joong Yun, Chel‐Jong Choi
Abstract
V. Rajagopal Reddy, V. Janardhanam, Jin‐Woo Ju, Hyung‐Joong Yun, Chel‐Jong Choi
Abstract
An abstract is not available in the OpenAlex record for this paper.
OpenAlex reports 17 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
Key concepts: Schottky diode, Schottky barrier, Equivalent series resistance, High-resolution transmission electron microscopy, Optoelectronics, Materials science, Metal–semiconductor junction, Diode