1994•Applied Physics LettersRequires access
Photoluminescence determination of the nitrogen doping concentration in 6H-SiC
Anne Henry, Olof Kordina, Christer Hallin, Carl G. Hemmingsson, Erik Janzén
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Abstract
The intensity of impurity and intrinsic luminescence lines reflects the impurity doping concentration. A calibration procedure is presented for the nitrogen impurity in 6H–SiC. The calibration is valid for a large range of n-type doping from 1014 to 1016 cm−3. Effects of excitation density, temperature during the photoluminescence experiments as well as the observation of acceptor related lines are discussed.