1989Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Visible Semiconductor Lasers

D. P. Bour

Open publisher page 10 citations

Abstract

Short-wavelength semiconductor lasers will potentially lead to major improvements in the performance of optical data storage systems. The various approaches to making visible semiconductor lasers are reviewed, including II-VI and III-V compound semiconductor lasers, and frequency-doubled infrared lasers. Although it is anticipated that diode lasers constructed from II-VI compounds will become important in the future, high-performance diode lasers of AlGaInP, a high-bandgap III-V alloy, are presently available. Lasing wavelength is 650nm<2.<680nm, and typical threshold current densities are 1-3 kλ/cm2. Recent advances in the growth of quantum well device structures have resulted in significant performance improvements.

About this research paper

What this paper is about

Short-wavelength semiconductor lasers will potentially lead to major improvements in the performance of optical data storage systems. The various approaches to making visible semiconductor lasers are reviewed, including II-VI and III-V compound semiconductor lasers, and frequency-doubled infrared lasers. Although it is anticipated that diode lasers constructed from II-VI compounds will become important in the future, high-performance diode lasers of AlGaInP, a high-bandgap III-V alloy, are presently available. Lasing wavelength is 650nm<2.<680nm, and typical threshold current densities are 1-3 kλ/cm2. Recent advances in the growth of quantum well device structures have resulted in significant performance improvements.

Why it matters

OpenAlex reports 10 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Short-wavelength semiconductor lasers will potentially lead to major improvements in the performance of optical data storage systems. The various approaches to making visible semiconductor lasers are reviewed, including II-VI and III-V compound semiconductor lasers, and frequency-doubled infrared lasers. Although it is anticipated that diode lasers constructed from II-VI compounds will become important in the future, high-performance diode lasers of AlGaInP, a high-bandgap III-V alloy, are presently available. Lasing wavelength is 650nm<2.<680nm, and typical threshold current densities are 1-3 kλ/cm2. Recent advances in the growth of quantum well device structures have resulted in significant performance improvements.

Key concepts: Laser, Semiconductor laser theory, Optoelectronics, Diode, Materials science, Lasing threshold, Semiconductor, Quantum well

Related papers

Back to paper searchBrowse research topicsOriginal source
Visible Semiconductor Lasers — Research Paper | ScholarLens