1999•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Optical lithography simulation and photoresist optimization for photomask fabrication

Benjamen M. Rathsack, Cyrus E. Tabery, Steven A. Scheer, Mike Pochkowski, Cecilia E. Philbin, Franklin D. Kalk, Clifford L. Henderson, Peter D. Buck, Carlton Grant Willson

Open publisher page 4 citations

Abstract

The demand for smaller and more uniform features on photomasks is rapidly increasing. The complexity of these patterns is also increasing with the need for optical proximity correction and phase shifting structures. These complex mask features demand unprecedented accuracy in pattern placement and dimensional control. We have conducted research designed to optimize the process for laser pattern generation by improving resolution and process latitude. Lithographic simulation was utilized for process optimization because of the very high cost of mask patterning and metrology experiments.

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What this paper is about

The demand for smaller and more uniform features on photomasks is rapidly increasing. The complexity of these patterns is also increasing with the need for optical proximity correction and phase shifting structures. These complex mask features demand unprecedented accuracy in pattern placement and dimensional control. We have conducted research designed to optimize the process for laser pattern generation by improving resolution and process latitude. Lithographic simulation was utilized for process optimization because of the very high cost of mask patterning and metrology experiments.

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Available abstract

The demand for smaller and more uniform features on photomasks is rapidly increasing. The complexity of these patterns is also increasing with the need for optical proximity correction and phase shifting structures. These complex mask features demand unprecedented accuracy in pattern placement and dimensional control. We have conducted research designed to optimize the process for laser pattern generation by improving resolution and process latitude. Lithographic simulation was utilized for process optimization because of the very high cost of mask patterning and metrology experiments.

Key concepts: Photomask, Lithography, Optical proximity correction, Computational lithography, Photolithography, Photoresist, Computer science, Process (computing)

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