2009•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Aerial plane inspection for advanced photomask defect detection

Won Sun Kim, Jin Hyung Park, Dong Hoon Chung, Chan Uk Jeon, Han-Ku Cho, Trent Hutchinson, Oscar Lee, William Y. C. Huang, Aditya Dayal

Open publisher page 0 citations

Abstract

A new methodology - Aerial Plane Inspection (API) - has been developed to inspect advanced photomasks used for the 45 nm node and beyond. Utilizing images from a high resolution mask inspection system, a mask image is recovered by combining the transmitted and reflected images. A software transformation is then performed to replicate the aerial image planes produced in a photolithography exposure system. These aerial images are used to compare adjacent die in a Die-Die inspection mode in order to find critical defects on the photomask. The mask recovery process and modeling of the aerial plane image allows flexibility to simulate a wide range of lithographic exposure systems, including immersion lithography. Any source shape, Sigma, and numerical aperture (NA) can be used at all common lithographic wavelengths. Sensitivity of the inspection can be fully adjusted to match photomask specifications for CD control, lineend shortening, OPC features, and for small and large defective areas. An additional adaptive sensitivity option can be utilized to automatically adjust sensitivity as a function of MEEF. Using the Aerial Plane Inspection to compare pattern images has the benefit of filtering out non-printing defects, while detecting very small printing defects. In addition, defects that are not printing at ideal exposure condition, but may be reducing the lithographic process window, can also be detected. Performing defect detection at the aerial image plane is more tolerant to small Optical Proximity Correction (OPC) sub-resolution assist features (SRAFs) that are difficult to inspect at the reticle image plane.

About this research paper

What this paper is about

A new methodology - Aerial Plane Inspection (API) - has been developed to inspect advanced photomasks used for the 45 nm node and beyond. Utilizing images from a high resolution mask inspection system, a mask image is recovered by combining the transmitted and reflected images. A software transformation is then performed to replicate the aerial image planes produced in a photolithography exposure system. These aerial images are used to compare adjacent die in a Die-Die inspection mode in order to find critical defects on the photomask. The mask recovery process and modeling of the aerial plane image allows flexibility to simulate a wide range of lithographic exposure systems, including immersion lithography. Any source shape, Sigma, and numerical aperture (NA) can be used at all common lithographic wavelengths. Sensitivity of the inspection can be fully adjusted to match photomask specifications for CD control, lineend shortening, OPC features, and for small and large defective areas. An additional adaptive sensitivity option can be utilized to automatically adjust sensitivity as a function of MEEF. Using the Aerial Plane Inspection to compare pattern images has the benefit of filtering out non-printing defects, while detecting very small printing defects. In addition, defects that are not printing at ideal exposure condition, but may be reducing the lithographic process window, can also be detected. Performing defect detection at the aerial image plane is more tolerant to small Optical Proximity Correction (OPC) sub-resolution assist features (SRAFs) that are difficult to inspect at the reticle image plane.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

A new methodology - Aerial Plane Inspection (API) - has been developed to inspect advanced photomasks used for the 45 nm node and beyond. Utilizing images from a high resolution mask inspection system, a mask image is recovered by combining the transmitted and reflected images. A software transformation is then performed to replicate the aerial image planes produced in a photolithography exposure system. These aerial images are used to compare adjacent die in a Die-Die inspection mode in order to find critical defects on the photomask. The mask recovery process and modeling of the aerial plane image allows flexibility to simulate a wide range of lithographic exposure systems, including immersion lithography. Any source shape, Sigma, and numerical aperture (NA) can be used at all common lithographic wavelengths. Sensitivity of the inspection can be fully adjusted to match photomask specifications for CD control, lineend shortening, OPC features, and for small and large defective areas. An additional adaptive sensitivity option can be utilized to automatically adjust sensitivity as a function of MEEF. Using the Aerial Plane Inspection to compare pattern images has the benefit of filtering out non-printing defects, while detecting very small printing defects. In addition, defects that are not printing at ideal exposure condition, but may be reducing the lithographic process window, can also be detected. Performing defect detection at the aerial image plane is more tolerant to small Optical Proximity Correction (OPC) sub-resolution assist features (SRAFs) that are difficult to inspect at the reticle image plane.

Key concepts: Photomask, Aerial image, Optical proximity correction, Photolithography, Lithography, Computer science, Optics, Process window

Related papers

Back to paper searchBrowse research topicsOriginal source
Aerial plane inspection for advanced photomask defect detection — Research Paper | ScholarLens