1995•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access
Die-to-database defect detection for reticles of 64- and 256-Mbit DRAMs
Yair Eran, Gad Greenberg, Gideon Rossman
Open publisher page 1 citations
Abstract
The development and production of 64 and 256 Mbit DRAMs presents new challenges to mask defect detection. As happened during the development of previous generations of DRAMs, the decrease in line/space design rule dictates a similar decrease in the specification of mask defect size. This trend introduces new technologies and new requirements. This paper is concerned with two evolving technologies: layout modification for optical proximity correction (OPC) and phase-shift masks (PSM). The new technologies pose many issues for the mask maker. In this paper the defect detection is addressed. In section 2 few cases of OPC reticle inspection are presented while in section 3 the defect detection of PSM is discussed.