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1997•Chinese Physics LettersRequires access

Interface Electronic Structure of Ge/ZnSe(111)

Haifeng Zhang, Chong‐Yu Wang, Rongchuan Fang, BAN DA-YAN, Yongping Li

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Abstract

Using linear muffin-tin orbitals method with atomic sphere approximation, the interface electronic structure of Ge/ZnSe(111) has been studied. The density of states, local density of states as well as local partial density of states are presented. The interface electronic structure and the interaction characteristics between interface atoms are analyzed. The results show a significant effect of the interface atomic arrangement on the electronic structures.

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What this paper is about

Using linear muffin-tin orbitals method with atomic sphere approximation, the interface electronic structure of Ge/ZnSe(111) has been studied. The density of states, local density of states as well as local partial density of states are presented. The interface electronic structure and the interaction characteristics between interface atoms are analyzed. The results show a significant effect of the interface atomic arrangement on the electronic structures.

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Available abstract

Using linear muffin-tin orbitals method with atomic sphere approximation, the interface electronic structure of Ge/ZnSe(111) has been studied. The density of states, local density of states as well as local partial density of states are presented. The interface electronic structure and the interaction characteristics between interface atoms are analyzed. The results show a significant effect of the interface atomic arrangement on the electronic structures.

Key concepts: Interface (matter), Electronic structure, Atomic orbital, Materials science, Tin, Local density of states, Linear combination of atomic orbitals, Density of states

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