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Diameter‐Dependent Performance of Single‐Walled Carbon Nanotube Thin‐Film Transistors

Yuki Asada, Fumiyuki Nihey, Shigekazu Ohmori, Hisanori Shinohara, Takeshi Saito

Open publisher page 43 citations

Abstract

Single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with various tube diameters and constant tube length are investigated. Similar variations of on-currents, independent of the diameter, are demonstrated according to percolation theory, but off-currents significantly depend on the diameter. The temperature dependence of the off-currents attributes the observed non-negligible off-state conductance to thermally excited carriers in semiconducting SWCNTs.

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What this paper is about

Single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with various tube diameters and constant tube length are investigated. Similar variations of on-currents, independent of the diameter, are demonstrated according to percolation theory, but off-currents significantly depend on the diameter. The temperature dependence of the off-currents attributes the observed non-negligible off-state conductance to thermally excited carriers in semiconducting SWCNTs.

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Available abstract

Single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with various tube diameters and constant tube length are investigated. Similar variations of on-currents, independent of the diameter, are demonstrated according to percolation theory, but off-currents significantly depend on the diameter. The temperature dependence of the off-currents attributes the observed non-negligible off-state conductance to thermally excited carriers in semiconducting SWCNTs.

Key concepts: Materials science, Carbon nanotube, Conductance, Percolation (cognitive psychology), Tube (container), Thin-film transistor, Carbon nanotube field-effect transistor, Transistor

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