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1984•Journal of Non-Crystalline SolidsRequires access

Deep recombination centers in a-Si:H

D. K. Biegelsen, Robert A. Street, W.A. Jackson, Richard L. Weisfield

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Key concepts: Dangling bond, Recombination, Excitation, Electron, Band gap, Doping, Enhanced Data Rates for GSM Evolution, Atomic physics

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