1984•IEEE Electron Device LettersRequires access
Improvement of mask-limited yield with a vote-taking lithographic scheme
Chong-Cheng Fu, David H. Dameron
Open publisher page 10 citations
Abstract
A lithographic technique which can significantly reduce the effect of photomask defects is investigated. It is based on exposures of multiple reticle fields containing identical patterns, and is especially suitable for 1 × wafer steppers. The principle, requirements, and initial experimental results of this method are presented.