1975•Journal of The Electrochemical SocietyOpen access

Low Surface Concentration of Boron in Silicon by Diffusion Through Silicon Dioxide

W. von Muench, C. Gessert

Abstract

It is shown that the diffusion of boron through a thin silicon dioxide layer can be used to control the surface acceptor concentration in silicon within the range from , with the junction depth varying from 0 to 15 μm. The diffusion constant of boron in was determined to be , for a boron surface concentration of about . Examples for the technical application of this method are briefly discussed.

Open-access reader

About this research paper

What this paper is about

Why it matters

OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Boron, Silicon, Silicon dioxide, Diffusion, Acceptor, Materials science, Layer (electronics), Diffusion layer