The Magnetisc Study of the ZnO Thin Film with Defects
Zhi Huan Lan, Hui Feng Zhang, Chun Yan Tian
Abstract
Zhi Huan Lan, Hui Feng Zhang, Chun Yan Tian
Abstract
The electronic structures of ZnO were calculated by using a accurate full-potential linerized plane-wave and supercell method. To research on the influence of the intrinsic defects such as O vacancies and Zn vacancies on the magnetism of ZnO thin film, we built 2x2x2 supercells of ZnO, Zn16O15 and Zn15O16. The results indicate that the pure ZnO and ZnO with O vacancies are non-magnetic, but ZnO with Zn acancies is magnetic. The magnetism originates from the spin-polarized O atoms around the Zn vacancy. We can draw a conclusion that Zn vacancies are the origin of magnetism in ZnO films.
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The electronic structures of ZnO were calculated by using a accurate full-potential linerized plane-wave and supercell method. To research on the influence of the intrinsic defects such as O vacancies and Zn vacancies on the magnetism of ZnO thin film, we built 2x2x2 supercells of ZnO, Zn16O15 and Zn15O16. The results indicate that the pure ZnO and ZnO with O vacancies are non-magnetic, but ZnO with Zn acancies is magnetic. The magnetism originates from the spin-polarized O atoms around the Zn vacancy. We can draw a conclusion that Zn vacancies are the origin of magnetism in ZnO films.
Key concepts: Magnetism, Supercell, Materials science, Vacancy defect, Condensed matter physics, Thin film, Zinc, Crystallography