2009International Journal of Numerical Modelling Electronic Networks Devices and FieldsRequires access

Modelling CoolMOSC3 transistor characteristics in SPICE

Krzysztof Górecki, J. Zarębski

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Abstract

Abstract In this paper three models of CoolMOSC3 transistors worked out by Infineon Technologies, dedicated for SPICE, are presented and investigated. These models are verified experimentally both for dc and ac device operating conditions. The advantages and drawbacks of the investigated models are shown and discussed. The device operating conditions, at which the models are of acceptable accuracy, are identified. Copyright © 2009 John Wiley & Sons, Ltd.

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What this paper is about

Abstract In this paper three models of CoolMOSC3 transistors worked out by Infineon Technologies, dedicated for SPICE, are presented and investigated. These models are verified experimentally both for dc and ac device operating conditions. The advantages and drawbacks of the investigated models are shown and discussed. The device operating conditions, at which the models are of acceptable accuracy, are identified. Copyright © 2009 John Wiley & Sons, Ltd.

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Available abstract

Abstract In this paper three models of CoolMOSC3 transistors worked out by Infineon Technologies, dedicated for SPICE, are presented and investigated. These models are verified experimentally both for dc and ac device operating conditions. The advantages and drawbacks of the investigated models are shown and discussed. The device operating conditions, at which the models are of acceptable accuracy, are identified. Copyright © 2009 John Wiley & Sons, Ltd.

Key concepts: Spice, Transistor model, Transistor, Electronic engineering, Computer science, Electrical engineering, Engineering, Voltage

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