2015Unpublished venueRequires access

Permittivity extraction from on-wafer scattering parameters at microwave frequency based on electromagnetic modeling

Xi Ning, Hui Huang, Shuming Chen, Jinying Zhang, Xinmeng Liu, Lei Wang

Open publisher page 1 citations

Abstract

A new and simple method for determining the permittivity of dielectric materials using electromagnetic modeling is presented in this paper. The permittivity, which is extracted from the on-wafer scattering parameters (S-parameters) of coplanar waveguides (CPWs) with different lengths fabricated in measured substrates, is estimated by comparing the propagation-constants calculated from S-parameters with the one simulated from electromagnetic modeling. Compared to the approach using general analytical calculation, these two approaches have similar accuracy at the frequency range from 1 GHz to 110 GHz for silicon substrate. However, our proposed approach is easier to be implemented.

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What this paper is about

A new and simple method for determining the permittivity of dielectric materials using electromagnetic modeling is presented in this paper. The permittivity, which is extracted from the on-wafer scattering parameters (S-parameters) of coplanar waveguides (CPWs) with different lengths fabricated in measured substrates, is estimated by comparing the propagation-constants calculated from S-parameters with the one simulated from electromagnetic modeling. Compared to the approach using general analytical calculation, these two approaches have similar accuracy at the frequency range from 1 GHz to 110 GHz for silicon substrate. However, our proposed approach is easier to be implemented.

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Available abstract

A new and simple method for determining the permittivity of dielectric materials using electromagnetic modeling is presented in this paper. The permittivity, which is extracted from the on-wafer scattering parameters (S-parameters) of coplanar waveguides (CPWs) with different lengths fabricated in measured substrates, is estimated by comparing the propagation-constants calculated from S-parameters with the one simulated from electromagnetic modeling. Compared to the approach using general analytical calculation, these two approaches have similar accuracy at the frequency range from 1 GHz to 110 GHz for silicon substrate. However, our proposed approach is easier to be implemented.

Key concepts: Permittivity, Scattering parameters, Wafer, Microwave, Materials science, Dielectric, Scattering, Relative permittivity

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