Permittivity extraction from on-wafer scattering parameters at microwave frequency based on electromagnetic modeling
Xi Ning, Hui Huang, Shuming Chen, Jinying Zhang, Xinmeng Liu, Lei Wang
Abstract
Xi Ning, Hui Huang, Shuming Chen, Jinying Zhang, Xinmeng Liu, Lei Wang
Abstract
A new and simple method for determining the permittivity of dielectric materials using electromagnetic modeling is presented in this paper. The permittivity, which is extracted from the on-wafer scattering parameters (S-parameters) of coplanar waveguides (CPWs) with different lengths fabricated in measured substrates, is estimated by comparing the propagation-constants calculated from S-parameters with the one simulated from electromagnetic modeling. Compared to the approach using general analytical calculation, these two approaches have similar accuracy at the frequency range from 1 GHz to 110 GHz for silicon substrate. However, our proposed approach is easier to be implemented.
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A new and simple method for determining the permittivity of dielectric materials using electromagnetic modeling is presented in this paper. The permittivity, which is extracted from the on-wafer scattering parameters (S-parameters) of coplanar waveguides (CPWs) with different lengths fabricated in measured substrates, is estimated by comparing the propagation-constants calculated from S-parameters with the one simulated from electromagnetic modeling. Compared to the approach using general analytical calculation, these two approaches have similar accuracy at the frequency range from 1 GHz to 110 GHz for silicon substrate. However, our proposed approach is easier to be implemented.
Key concepts: Permittivity, Scattering parameters, Wafer, Microwave, Materials science, Dielectric, Scattering, Relative permittivity