2007•Journal of Crystal GrowthRequires access

Growth of high-In-content InAlN nanocolumns on Si (1 1 1) by RF-plasma-assisted molecular-beam epitaxy

Jumpei Kamimura, Tetsuya Kouno, Shunsuke Ishizawa, Akihiko Kikuchi, Katsumi Kishino

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Key concepts: Molecular beam epitaxy, Photoluminescence, Materials science, Wavelength, Plasma, Optoelectronics, Epitaxy, Analytical Chemistry (journal)

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Growth of high-In-content InAlN nanocolumns on Si (1 1 1) by RF-plasma-assisted molecular-beam epitaxy — Research Paper | ScholarLens