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1994•Journal of The Electrochemical SocietyRequires access

Fluorine‐Enhanced Boron Migration into Oxide from Underlying Silicon

Yoshiyuki Satô, Izumi Kawashima

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Abstract

The behavior of boron and fluorine introduced into the SiO 2 / Si system is investigated. Fluorine introduction increases sheet resistances of boron layers in silicon after heat‐treatment in both nitrogen and oxygen atmospheres. Boron depth profiles reveal that fluorine causes boron to migrate into SiO 2 from silicon. This phenomenon can be explained if we assume that fluorine is incorporated into the SiO 2 network together with boron to lower the viscosity of SiO 2 .

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What this paper is about

The behavior of boron and fluorine introduced into the SiO 2 / Si system is investigated. Fluorine introduction increases sheet resistances of boron layers in silicon after heat‐treatment in both nitrogen and oxygen atmospheres. Boron depth profiles reveal that fluorine causes boron to migrate into SiO 2 from silicon. This phenomenon can be explained if we assume that fluorine is incorporated into the SiO 2 network together with boron to lower the viscosity of SiO 2 .

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Available abstract

The behavior of boron and fluorine introduced into the SiO 2 / Si system is investigated. Fluorine introduction increases sheet resistances of boron layers in silicon after heat‐treatment in both nitrogen and oxygen atmospheres. Boron depth profiles reveal that fluorine causes boron to migrate into SiO 2 from silicon. This phenomenon can be explained if we assume that fluorine is incorporated into the SiO 2 network together with boron to lower the viscosity of SiO 2 .

Key concepts: Boron, Fluorine, Silicon, Materials science, Nitrogen, Inorganic chemistry, Oxygen, Oxide

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