2009•SemiconductorsRequires access

Obtainment of textured films of aluminum nitride by thermochemical nitridation of sapphire

Kh. Sh-o. Kaltaev, N. S. Sidelnikova, S. V. Nizhankovskiy, A. Ya. Dan’ko, Monika Rom, P.V. Mateychenko, M. V. Dobrotvorskaya, А. Т. Будников

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Abstract

The possibility of obtaining textured aluminum nitride films by thermochemical nitridation of sapphire in the temperature range of 1200–1500°C in nitrogen atmosphere with the CO content from 0.1 to 5 vol % is shown. The diffusion mechanism of formation of the aluminum nitride film on the sapphire surface under the effect of the reducing medium is established.

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Available abstract

Key concepts: Sapphire, Nitride, Materials science, Aluminium, Nitrogen, Diffusion, Atmospheric temperature range, Aluminium nitride