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Investigation of Disordered Semiconductor Quantum Wells by Coherent Excitation Spectroscopy

A. Euteneuer, E. Finger, W. Stolz, T. Meier, Philip A. Thomas, Sebastian Koch, Martin R. Hofmann, W. W. Rühle, R. Hey, K. H. Ploog

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Abstract

First, we study coupling of excitons in different quantum-well islands by coherent excitation spectroscopy and find that excitons in different islands are not coherently coupled. Second, we investigate exciton and biexciton binding energies in inhomogeneously broadened (GaIn)As/Ga(PAs) multi quantum wells. A strong increase of the 1s–2s-splitting with increasing exciton localization is found, whereas the biexciton binding energy shows a very weak decrease with increasing localization.

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What this paper is about

First, we study coupling of excitons in different quantum-well islands by coherent excitation spectroscopy and find that excitons in different islands are not coherently coupled. Second, we investigate exciton and biexciton binding energies in inhomogeneously broadened (GaIn)As/Ga(PAs) multi quantum wells. A strong increase of the 1s–2s-splitting with increasing exciton localization is found, whereas the biexciton binding energy shows a very weak decrease with increasing localization.

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Available abstract

First, we study coupling of excitons in different quantum-well islands by coherent excitation spectroscopy and find that excitons in different islands are not coherently coupled. Second, we investigate exciton and biexciton binding energies in inhomogeneously broadened (GaIn)As/Ga(PAs) multi quantum wells. A strong increase of the 1s–2s-splitting with increasing exciton localization is found, whereas the biexciton binding energy shows a very weak decrease with increasing localization.

Key concepts: Biexciton, Exciton, Quantum well, Spectroscopy, Binding energy, Excitation, Physics, Semiconductor

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