Alexander M. Taratin, S.A. Vorobiev
Abstract
Abstract A detailed computer simulation of the catch‐up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch‐up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported.
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Abstract A detailed computer simulation of the catch‐up effect for a 1 GeV proton beam in a uniformly bent silicon crystal is performed. The dependences of the efficiency of proton catch‐up in the channeling regime on bending radius of the crystal and on incidence angle of the beam are reported.
Key concepts: Bent molecular geometry, Proton, Beam (structure), RADIUS, Bend radius, Crystal (programming language), Bending, Silicon