Continuous-wave Nd:GdVO4/LBO laser at 541.5 nm under diode pumping into the emitting level
Y. L. Li, Y. H. Zhang, Y. C. Zhang
Abstract
Y. L. Li, Y. H. Zhang, Y. C. Zhang
Abstract
We report a green laser at 541.5 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1083 nm Nd:GdVO4 laser under 880 nm diode pumping into the emitting level 4 F 3/2. A LiB3O5 (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.52 W of cw output power at 541.5 nm is achieved. The optical-to-optical conversion efficiency is up to 14.2%, and the fluctuation of the green output power was better than 3.6% in the given 30 min.
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We report a green laser at 541.5 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1083 nm Nd:GdVO4 laser under 880 nm diode pumping into the emitting level 4 F 3/2. A LiB3O5 (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.52 W of cw output power at 541.5 nm is achieved. The optical-to-optical conversion efficiency is up to 14.2%, and the fluctuation of the green output power was better than 3.6% in the given 30 min.
Key concepts: Materials science, Laser, Continuous wave, Energy conversion efficiency, Second-harmonic generation, Optics, Optoelectronics, Diode