2010•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Traveling wave modeling, simulation, and analysis of quantum-dot mode-locked semiconductor lasers

Mindaugas Radziunas, A. G. Vladimirov, Evgeny A. Viktorov

Abstract

We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.

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Key concepts: Wetting layer, Quantum dot laser, Semiconductor laser theory, Quantum dot, Laser, Saturable absorption, Semiconductor, Optoelectronics