Modeling and performance analysis of silicon based p-i-n solar cells

This paper concentrates on the modeling of a Silicon based p-i-n solar cell and analyze the performance of it at different doping concentrations, light intensity and temperature. In this paper a virtual structure of Silicon based p-i-n solar cell was modeled and then a major analysis was done to increase the efficiency of the highly demanding solar cell by changing one of the most important parameters: the doping concentration of the p and n type Silicon doping. The doping concentration of the p-type i.e. the acceptor Silicon has been kept constant and the doping concentration of the donor atom were changed to find the performance of the solar cell. This analysis gives an excellent result with a maximum efficiency of 25.84% and a fill factor of 90.13%.