1979•Applied Physics LettersRequires access

Electron bombardment effect on the breakdown voltage of Zener diodes

T. Tomimasu

Abstract

The nature of electron irradiation-induced changes in the avalanche breakdown voltage has been investigated for Zener diodes with breakdown voltages from 5.6 to 25.5 V. Their breakdown-voltage change is proportional to the irradiation electron fluence and inversely proportional to the impurity gradient in the linearly graded silicon p-n junction.

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Key concepts: Zener diode, Avalanche diode, Breakdown voltage, Fluence, Diode, Avalanche breakdown, Irradiation, Materials science