18.5: Development of an S-band, 200 MHz instantaneous bandwidth, 22 kW average power klystron
Zhaochuan Zhang, Baoli Shen, Chunjiu Fu, Xiaojuan Yu, Feng Zhang, Yunping Huang
Abstract
Zhaochuan Zhang, Baoli Shen, Chunjiu Fu, Xiaojuan Yu, Feng Zhang, Yunping Huang
Abstract
This paper reports the design considerations, simulation results and test specifications of an S-band, 200 MHz instantaneous bandwidth, 22 kW average power klystron, which was developed by the Institute of Electronics, Chinese Academy of Sciences (IECAS) before Dec., 2009. The overlapping mode technology is adopted in the output section to provide appropriate interaction impedance within the confines of the required bandwidth. The typical result is a more than 1.1 MW peak output power with a 67 μs RF pulse width, a 300 Hz repetition rate, and the output power fluctuation is less than 1.2 dB at the same input power.
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This paper reports the design considerations, simulation results and test specifications of an S-band, 200 MHz instantaneous bandwidth, 22 kW average power klystron, which was developed by the Institute of Electronics, Chinese Academy of Sciences (IECAS) before Dec., 2009. The overlapping mode technology is adopted in the output section to provide appropriate interaction impedance within the confines of the required bandwidth. The typical result is a more than 1.1 MW peak output power with a 67 μs RF pulse width, a 300 Hz repetition rate, and the output power fluctuation is less than 1.2 dB at the same input power.
Key concepts: Klystron, Bandwidth (computing), Electrical engineering, Electrical impedance, Power (physics), Power bandwidth, Engineering, Power electronics