Self-interaction-corrected local density approximation pseudopotential calculations of the structural phase transformations of ZnO and ZnS under high pressure
Abdallah Qteish
Abstract
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Abdallah Qteish
Abstract
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The structural phase transformations under high pressure of ZnO and ZnS have been investigated by using the Vogel-Krüger-Pollmann (VKP) scheme, in which the electronic self-interaction correction to the local density approximation (LDA) is introduced in a non-self-consistent manner within the pseudopotential approach. In these calculations, I have used highly optimized pseudopotentials and a plane-wave expansion of the wavefunctions. Moreover, the electronic structures of the zinc-blende (ZB) and rock-salt (RS) phases of both compounds have been similarly calculated. It has been found that the VKP scheme provides a highly improved description, relative to the LDA results, for the structural and electronic structure properties of the considered systems. However, the so-calculated transition pressures of the ZB-to-RS transition for both ZnO and ZnS are found to be significantly larger than the experimental data. RS-ZnO is predicted to be an indirect-gap semiconductor, with a wide band gap of 4.2 eV.
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The structural phase transformations under high pressure of ZnO and ZnS have been investigated by using the Vogel-Krüger-Pollmann (VKP) scheme, in which the electronic self-interaction correction to the local density approximation (LDA) is introduced in a non-self-consistent manner within the pseudopotential approach. In these calculations, I have used highly optimized pseudopotentials and a plane-wave expansion of the wavefunctions. Moreover, the electronic structures of the zinc-blende (ZB) and rock-salt (RS) phases of both compounds have been similarly calculated. It has been found that the VKP scheme provides a highly improved description, relative to the LDA results, for the structural and electronic structure properties of the considered systems. However, the so-calculated transition pressures of the ZB-to-RS transition for both ZnO and ZnS are found to be significantly larger than the experimental data. RS-ZnO is predicted to be an indirect-gap semiconductor, with a wide band gap of 4.2 eV.
Key concepts: Pseudopotential, Local-density approximation, Electronic structure, Plane wave, Band gap, Condensed matter physics, Wave function, Phase (matter)