Ultraviolet photonic crystal laser
Xin Wu, Alexey G. Yamilov, X. Liu, S. Li, Vinayak P. Dravid, R. P. H. Chang, Hui Cao
Abstract
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Xin Wu, Alexey G. Yamilov, X. Liu, S. Li, Vinayak P. Dravid, R. P. H. Chang, Hui Cao
Abstract
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We fabricated two-dimensional photonic crystal structures in zinc oxide films with focused-ion-beam etching. Lasing is realized in the near-ultraviolet frequency at room temperature under optical pumping. From the measurement of lasing frequency and spatial profile of the lasing modes, as well as the photonic band structure calculation, we conclude that lasing occurs in the strongly localized defect modes near the edges of photonic band gap. These defect modes originate from the structure disorder unintentionally introduced during the fabrication process.
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We fabricated two-dimensional photonic crystal structures in zinc oxide films with focused-ion-beam etching. Lasing is realized in the near-ultraviolet frequency at room temperature under optical pumping. From the measurement of lasing frequency and spatial profile of the lasing modes, as well as the photonic band structure calculation, we conclude that lasing occurs in the strongly localized defect modes near the edges of photonic band gap. These defect modes originate from the structure disorder unintentionally introduced during the fabrication process.
Key concepts: Lasing threshold, Photonic crystal, Materials science, Optoelectronics, Ultraviolet, Laser, Wide-bandgap semiconductor, Etching (microfabrication)