2009Optoelectronics Instrumentation and Data ProcessingRequires access

Calculation of the reflection coefficient of metal-dielectric structures in frustrated total internal reflection

N. D. Goldina

Open publisher page 13 citations

Abstract

Analytical formulas for calculating the reflection coefficient of a thin-film metal-dielectric structure at light incidence angles greater than the critical angle of total internal reflection were obtained using a conducting surface model for a thin absorbing layer. It is shown that an asymmetric interference pattern of the spectral dependence of the reflection coefficient has higher sensitivity to changes in the refractive index of the medium.

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Analytical formulas for calculating the reflection coefficient of a thin-film metal-dielectric structure at light incidence angles greater than the critical angle of total internal reflection were obtained using a conducting surface model for a thin absorbing layer. It is shown that an asymmetric interference pattern of the spectral dependence of the reflection coefficient has higher sensitivity to changes in the refractive index of the medium.

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Available abstract

Analytical formulas for calculating the reflection coefficient of a thin-film metal-dielectric structure at light incidence angles greater than the critical angle of total internal reflection were obtained using a conducting surface model for a thin absorbing layer. It is shown that an asymmetric interference pattern of the spectral dependence of the reflection coefficient has higher sensitivity to changes in the refractive index of the medium.

Key concepts: Total internal reflection, Reflection coefficient, Refractive index, Optics, Dielectric, Materials science, Reflection (computer programming), Total external reflection

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