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1969•IEEE Journal of Solid-State CircuitsRequires access

Low-light-level properties of the phototransistor charge-storage mode

J.S. Brugler

Open publisher page 2 citations

Abstract

The phototransistor charge-storage or integration mode at low light levels is described accurately using a simple model. The base-emitter junction governs charge readout at low levels, causing very nonlinear circuit behavior. Sluggish transient response, increased sensitivity of output to transistor current gain, and a nonlinear transfer characteristic degrade phototransistor low-light-level behavior more severely than junction dark current.

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What this paper is about

The phototransistor charge-storage or integration mode at low light levels is described accurately using a simple model. The base-emitter junction governs charge readout at low levels, causing very nonlinear circuit behavior. Sluggish transient response, increased sensitivity of output to transistor current gain, and a nonlinear transfer characteristic degrade phototransistor low-light-level behavior more severely than junction dark current.

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Available abstract

The phototransistor charge-storage or integration mode at low light levels is described accurately using a simple model. The base-emitter junction governs charge readout at low levels, causing very nonlinear circuit behavior. Sluggish transient response, increased sensitivity of output to transistor current gain, and a nonlinear transfer characteristic degrade phototransistor low-light-level behavior more severely than junction dark current.

Key concepts: Common emitter, Photodiode, Optoelectronics, Charge (physics), Photoresistor, Transistor, Dark current, Transient (computer programming)

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