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2014•Unpublished venueOpen access

InGaN Quantum Dots for High Efficiency Blue and Green Light Emitters

Arthur Fischer, Xiaoyin Xiao, Jeffrey Y. Tsao, Daniel D. Koleske, Ping Lu, Jeremy B. Wright, Sheng Liu, George T. Wang

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Abstract

InGaN quantum dots at high densities (~1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.

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InGaN quantum dots at high densities (~1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.

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Available abstract

InGaN quantum dots at high densities (~1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.

Key concepts: Quantum dot, Chemical vapor deposition, Optoelectronics, Materials science, Wide-bandgap semiconductor, Metalorganic vapour phase epitaxy, Light-emitting diode, Nanotechnology

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