Analysis of the Tilt and Rotation Angle Dependence of Boron Distributions Implanted into <100> Silicon

Over 300 experimental distribution profiles of boron implanted into <100> orientation single‐crystal silicon at three energies and various tilt and rotation angle combinations have been measured. The variation in the amount of channeling observed at different tilt and rotation angle combinations can be understood in terms of variation in channeling through five low index axes and planes. These results differ from those previously reported and indicate that, for the range of energies and angles covered in this analysis, in the case where 0° rotation results in alignment with a {220} planar channel, the minimum amount of channeling occurs for tilt angles greater than 8° and rotation angles near 45°.