Design for linearizability of GaN based multi-carrier Doherty power amplifier through bias optimization
Oualid Hammi, Sung‐Chan Jung, Fadhel M. Ghannouchi
Abstract
Oualid Hammi, Sung‐Chan Jung, Fadhel M. Ghannouchi
Abstract
In this paper, a GaN based symmetrical Doherty power amplifier is designed. The Doherty amplifier bias conditions are optimized for a trade-off between power added efficiency and linearity. The carrier amplifier is biased for linearity and the peaking amplifier bias is chosen for maximum power added efficiency. Measurement results under a four carrier WCDMA drive signal show respectively 43% power added efficiency and -32.5dBc adjacent channel leakage ratio at 6dB output power back-off. Linearization of the designed Doherty PA using baseband digital predistortion led to quasi perfect cancellation of spectrum regrowth while operating at an output power back-off equal to the input signal's peak to average power ratio.
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In this paper, a GaN based symmetrical Doherty power amplifier is designed. The Doherty amplifier bias conditions are optimized for a trade-off between power added efficiency and linearity. The carrier amplifier is biased for linearity and the peaking amplifier bias is chosen for maximum power added efficiency. Measurement results under a four carrier WCDMA drive signal show respectively 43% power added efficiency and -32.5dBc adjacent channel leakage ratio at 6dB output power back-off. Linearization of the designed Doherty PA using baseband digital predistortion led to quasi perfect cancellation of spectrum regrowth while operating at an output power back-off equal to the input signal's peak to average power ratio.
Key concepts: Amplifier, Adjacent channel, Power-added efficiency, Doherty amplifier, Linear amplifier, Predistortion, RF power amplifier, Baseband