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2012•Journal of SemiconductorsRequires access

A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology

Yangyang Peng, Kejie Lu, Wenquan Sui

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Abstract

A two-stage 2.5-5 GHz monolithic low-noise amplifier (LNA) has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT technology. To achieve wide operation bandwidth and low noise figure, the proposed LNA uses a wideband matching network and a negative feedback technique. Measured results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB gain. The input and output return loss exceeded −10-dB across the band. The power consumption of this LNA is 33 mW. According to the author's knowledge, this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.

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What this paper is about

A two-stage 2.5-5 GHz monolithic low-noise amplifier (LNA) has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT technology. To achieve wide operation bandwidth and low noise figure, the proposed LNA uses a wideband matching network and a negative feedback technique. Measured results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB gain. The input and output return loss exceeded −10-dB across the band. The power consumption of this LNA is 33 mW. According to the author's knowledge, this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.

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Available abstract

A two-stage 2.5-5 GHz monolithic low-noise amplifier (LNA) has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT technology. To achieve wide operation bandwidth and low noise figure, the proposed LNA uses a wideband matching network and a negative feedback technique. Measured results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB gain. The input and output return loss exceeded −10-dB across the band. The power consumption of this LNA is 33 mW. According to the author's knowledge, this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.

Key concepts: High-electron-mobility transistor, Amplifier, Low-noise amplifier, Optoelectronics, Materials science, Electrical engineering, Noise (video), Power (physics)

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