Field-emission from long SnO2 nanobelt arrays
Yujin Chen, Q. H. Li, Y. X. Liang, T. H. Wang, Qing Zhao, Dapeng Yu
Abstract
Yujin Chen, Q. H. Li, Y. X. Liang, T. H. Wang, Qing Zhao, Dapeng Yu
Abstract
We report on field emission from SnO2 nanobelt arrays with the length of about 90 μm grown on silicon substrates. The turn-on field of the nanobelt arrays at the current density of 1μA∕cm2, is 4.5, 3.0, 2.4, and 2.3V∕μm as the distance between anode and cathode (d) is 0.1, 0.2, 0.35, and 0.5 mm, respectively. The current density rapidly reaches 2.1mA∕cm2 at the electrical field of 4.4V∕μm at d=0.35mm. The current density is higher than or comparable to those of the carbon nanotubes and other one-dimensional nanostructured materials. We also discuss the mechanism of high current densities and estimate the enhancement factor according to both the Fowler–Nordheim law and the reported model on micrometer-long of carbon nanotubes.
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We report on field emission from SnO2 nanobelt arrays with the length of about 90 μm grown on silicon substrates. The turn-on field of the nanobelt arrays at the current density of 1μA∕cm2, is 4.5, 3.0, 2.4, and 2.3V∕μm as the distance between anode and cathode (d) is 0.1, 0.2, 0.35, and 0.5 mm, respectively. The current density rapidly reaches 2.1mA∕cm2 at the electrical field of 4.4V∕μm at d=0.35mm. The current density is higher than or comparable to those of the carbon nanotubes and other one-dimensional nanostructured materials. We also discuss the mechanism of high current densities and estimate the enhancement factor according to both the Fowler–Nordheim law and the reported model on micrometer-long of carbon nanotubes.
Key concepts: Field electron emission, Current density, Anode, Cathode, Materials science, Micrometer, Silicon, Current (fluid)