2003•Applied Surface ScienceRequires access

Thickness dependent integrity of gate oxide on SOI

Mikio Tsujiuchi, Toshiaki Iwamatsu, Hideki Naruoka, Hiroshi Umeda, T. Ippōshi, Shigeto Maegawa, Yasuo Inoue

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Key concepts: Time-dependent gate oxide breakdown, Silicon on insulator, Wafer, Gate oxide, Materials science, Oxide, Optoelectronics, Dielectric strength