2009Physics of the Solid StateRequires access

Level splitting in semimagnetic semiconductors under spin-magnetophonon resonance conditions

V. L. Gurevich, M. I. Muradov

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Abstract

The splitting of electronic levels in quantum wells of semimagnetic semiconductors typically characterized by large effective g factors is analyzed theoretically. They are found to be capable of supporting resonance, provided the Zeeman spin-level splitting is equal to the energy of the longitudinal optical phonon ħω‖. The resonance condition can be written as ħω‖ = gμB B. This condition can be satisfied by choosing the magnetic field Bsuch that the sum of the energies of the lowest spin level and the optical phonon coincides with the energy of the highest level. It is shown that these two degenerate energy levels should experience mutual repulsion. The magnitude of the corresponding splitting depends on both the electron-phonon and spin-orbit interactions in semiconductors; moreover, it turns out substantially lower than the Zeeman energy gμB B. Resonant passage of light through and its reflection from a quantum well are considered as one of possible ways to observe this energy level splitting.

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The splitting of electronic levels in quantum wells of semimagnetic semiconductors typically characterized by large effective g factors is analyzed theoretically. They are found to be capable of supporting resonance, provided the Zeeman spin-level splitting is equal to the energy of the longitudinal optical phonon ħω‖. The resonance condition can be written as ħω‖ = gμB B. This condition can be satisfied by choosing the magnetic field Bsuch that the sum of the energies of the lowest spin level and the optical phonon coincides with the energy of the highest level. It is shown that these two degenerate energy levels should experience mutual repulsion. The magnitude of the corresponding splitting depends on both the electron-phonon and spin-orbit interactions in semiconductors; moreover, it turns out substantially lower than the Zeeman energy gμB B. Resonant passage of light through and its reflection from a quantum well are considered as one of possible ways to observe this energy level splitting.

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Available abstract

The splitting of electronic levels in quantum wells of semimagnetic semiconductors typically characterized by large effective g factors is analyzed theoretically. They are found to be capable of supporting resonance, provided the Zeeman spin-level splitting is equal to the energy of the longitudinal optical phonon ħω‖. The resonance condition can be written as ħω‖ = gμB B. This condition can be satisfied by choosing the magnetic field Bsuch that the sum of the energies of the lowest spin level and the optical phonon coincides with the energy of the highest level. It is shown that these two degenerate energy levels should experience mutual repulsion. The magnitude of the corresponding splitting depends on both the electron-phonon and spin-orbit interactions in semiconductors; moreover, it turns out substantially lower than the Zeeman energy gμB B. Resonant passage of light through and its reflection from a quantum well are considered as one of possible ways to observe this energy level splitting.

Key concepts: Zeeman effect, Condensed matter physics, Degenerate energy levels, Energy level splitting, Zeeman energy, Physics, Zero field splitting, Semiconductor

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